Band-gap engineering of semiconductor nanowires through composition modulation |
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| Authors: | Liang Yongqi Zhai Lin Zhao Xinsheng Xu Dongsheng |
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| Affiliation: | State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China. |
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| Abstract: | Alloyed ternary CdS(1-x)Se(x) nanowires were synthesized by template-assisted electrodeposition, in which the ratio of S to Se in the nanowires was controlled by adjusting the relative amounts of the starting materials. Higher-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) showed that the alloyed ternary CdS(1-x)Se(x) nanowires are highly crystalline, and no phase-separated Cd was observed in these nanowires. Optical measurements indicated that the band-gap engineering can be realized in these CdS(1-x)Se(x) nanowires through modulating the composition of S and Se. With broadly tunable optical and electrical properties, these alloyed nanowires could be used in color-tuned nanolasers, biological labels, and nanoelectronics. |
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