Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys |
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Authors: | Gerald Lucovsky Jim C Phillips |
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Institution: | aNorth Carolina State University, Raleigh, NC 27695-8202, USA;bRutgers University, Piscataway, NJ 08854, USA |
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Abstract: | Transitions into, and out of intermediate phases (IPs) with minimal strain have been identified to date by Boolchand and co-workers, in bulk glasses, primarily by the extraordinary low values of the change in enthalpy, ΔHnr, associated with non-reversible heat flow, and by Lucovsky and coworkers in deposited thin films, and at dielectric–semiconductor interfaces by combining spectrographic characterizations, primarily synchrotron X-ray absorption and X-ray photoemission, and electrical measurements. This paper emphasizes chemical bonding self-organizations that minimize macroscopic strain within the IP windows, and identifies for the first time the necessary and sufficient conditions for IP windows to open, and to close, as a function of changes in the alloy composition. Percolation theory, and in particular competitive and synergistic double percolation provide a quantification of IP window first and second transition compositions that account for many of the experimentally determined IP window threshold transitions and IP window widths identified to date. |
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Keywords: | Amorphous semiconductors Glass transition Chalcogenides Mechanical stress relaxation Percolation Oxide glasses Alkali silicates Borosilicates Medium-range order Structural relaxation |
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