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Magnetic and electronic properties of Mn2Sn thin films: First-principles calculations and high temperature series expansions
Institution:1. Laboratory of Materials, Processes, Environment and Quality, Cadi Ayyed University, National School of Applied Sciences, BP 63, Safi 46000, Morocco;2. Institut Néel, CNRS et Université Joseph Fourier, BP 166, Grenoble Cedex 9 F-38042, France;3. Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat, Morocco;4. Hassan II Academy of Science and Technology, Rabat, Morocco;5. Equipe de Physique du Solide, Laboratoire LIPI, Ecole Normale Supérieure, BP 5206, Bensouda, Fes, Morocco;6. Laboratoire de Physique du Solide, Université Sidi Mohammed Ben Abdellah, Faculté des sciences Dhar Mahraz, BP 1796, Fes, Morocco
Abstract:In this paper, first-principles calculations have been performed in order to study the electronic and magnetic properties of the bulk and the (0 0 1) surface of Mn2Sn thin films using self-consistent ab initio calculations, based on the density functional theory approach and using the product of the muffin-tin radius and the maximum reciprocal space vector, RMT. Kmax, we full potential linear augmented plane wave methods. Spin-polarized calculations within the framework of density-functional theory are a powerful tool for describing the magnetism of itinerant electrons in solid state materials. The total and partial density of states of Mn2Sn thin films were calculated. The magnetic moments considered to lie along the c axes are computed. The data obtained from the ab initio calculations are used as an input for the high temperature series expansions calculations used to compute other magnetic parameters. The critical temperature and exchange interactions between the magnetic atoms in the Mn2Sn thin films are obtained using high temperature series expansions and mean field theory, respectively.
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