Fe/ZnSe/Fe junctions: Interplay between interface structure and tunneling magnetoresistance |
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Authors: | C Helman V Ferrari J Milano AM Llois |
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Institution: | aCNEA, Gerencia de aplicaciones e investigaciones no nucleares, Centro Atómico Constituyentes, Pdo. San Martin, Buenos Aires, Argentina;bCNEA and Instituto Balseiro, UnCuyo. Centro Atómico Bariloche (R8402AGP), San Carlos de Bariloche, Rio Negro, Argentina |
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Abstract: | We investigate the electronic structure of Fe/ZnSe/Fe magnetic tunnel junctions for which interdiffusion and reconstruction at the interfaces are considered. Taking into account the ab initio potential profile throughout the different layers of the structure, we discuss about its implications on the tunnel conductance. Our results show that interface reconstruction drives changes in the electronic structure which, in turn, produce an increase of the kinetic energy of the conduction electrons, independently of their spin orientation. We suggest that this reconstruction underlies the low tunnel magnetoresistance (TMR), as it is observed in transport measurements when compared with the theoretical value estimated for sharp interfaces. |
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Keywords: | Tunnel Interfaces TMR MTJ |
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