| 原位As掺杂p型碲镉汞薄膜的制备研究 |
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| 引用本文： | 宋淑芳,田震.原位As掺杂p型碲镉汞薄膜的制备研究[J].激光与红外,2018,48(12):1500-1502. |
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| 作者姓名： | 宋淑芳 田震 |
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| 作者单位： | 华北光电技术研究所,北京 100015 |
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| 摘 要： | 非本征p 型掺杂碲镉汞材料可以有效克服少子寿命偏低等问题,提高长波和甚长波红外焦平面器件的性能。本文重点阐述了As 掺杂实现p型掺杂的基础性原理,以及其制备方法,为p-on-n碲镉汞材料器件研究提供依据。
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| 关 键 词： | p型 HgCdTe As掺杂 |
Preparation study of p-type As doped HgCdTe material |
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| SONG Shu-fang,TIAN Zhen.Preparation study of p-type As doped HgCdTe material[J].Laser & Infrared,2018,48(12):1500-1502. |
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| Authors: | SONG Shu-fang TIAN Zhen |
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| Institution: | North China Research Institute of Electro-Optics,Beijing 100015,China |
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| Abstract: | The extrinsic p-type doped HgCdTe material has the high minority carrier lifetime and can effectively improve device performance of long wave infrared or very long wave infrared HgCdTe detector.In this paper,the theory of p-type HgCdTe by As atom doping is reviewed.Also a preparation study of As doping p-type HgCdTe is given,which will be the basis for research about p-on-n HgCdTe materials and devices. |
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| Keywords: | p-type HgCdTe As dopping |
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