Solar cells with porous silicon: modification of surface-recombination velocity

Laser-induced transient-grating measurements were performed to monitor the influence of porous silicon on the surface recombination of a highly doped n⁺-silicon emitter of solar cells. With this technique, photocarrier diffusion and recombination with a time resolution of some tens of picoseconds can be studied. Using pulses of the second- and third-harmonic radiation from an Nd³⁺:YAG laser (quantum energy 2.34 and 3.51 eV, respectively), two different-depth regions of the emitter were excited. Using a kinetic model, which includes carrier diffusion and recombination at the surface and in the bulk of the emitter, surface-recombination velocities in a series of samples typical for each successive operation of solar-cell technology with different surface-doping level and surface preparation were evaluated. From the analysis, we conclude that porous silicon formed on the emitter passivates the surface of the silicon layer, i.e. reduces the rate of surface recombination at the porous silicon–crystalline silicon interface. Ytterbium as a co-dopant of the emitter increases the surface-recombination velocity. Received: 26 June 2000 / Accepted: 4 December 2000 / Published online: 26 April 2001