Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique |
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Authors: | S Ghosh P Srivastava B Pandey M Saurav P Bharadwaj DK Avasthi D Kabiraj SM Shivaprasad |
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Institution: | (1) Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India;(2) Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India;(3) National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi, 110012, India |
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Abstract: | Zinc oxide (ZnO) and Ni-doped zinc oxide (ZnO:Ni) films are prepared by atom beam sputtering with an intent of growing transparent
conducting oxide (TCO) material and understanding its physical properties. The crystalline phases of the films are identified
by the grazing angle X-ray diffraction (GAXRD) technique. Thicknesses of the films are measured by ellipsometry. Chemical
states of the elements present in the films are investigated by X-ray photoelectron spectroscopy (XPS), which indicates the
presence of Ni in the ZnO environment in a divalent state. Average transmission across the ZnO:Ni film was determined to be
∼83% in the visible region, which is less than that (∼90%) of undoped ZnO films. The resistivity measured by van der Pauw
technique of the ZnO:Ni film (∼9×10-3 Ω cm) is two orders of magnitude smaller as compared to its undoped counterpart (1 Ω cm). For ZnO:Ni film an average carrier
concentration of ∼1.4×1019 cm-3 was observed by Hall measurements. Two important mechanisms reported in the literature viz. influence of d–d transition bands
and electron scattering from crystallites/grains are discussed as the possible causes for the increase in conductivity on
Ni doping in ZnO.
PACS 73.50.Bk; 78.66.Li; 79.60.Dp; 61.05.cp |
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