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Schottky contact barrier height enhancement on p-type silicon by wet chemical etching |
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| Authors: | G. A. Adegboyega A. Poggi E. Susi A. Castaldini A. Cavallini |
| Affiliation: | (1) C.N.R. - Istituto LAMEL, Via Castagnoli, 1, I-40126 Bologna, Italy;(2) GNSM-CISM Group, Institute of Physics, University of Bologna, Via Irnerio 46, I-40126 Bologna, Italy;(3) Present address: Department of Electronic and Electrical Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria |
| Abstract: | A wet chemical etch preceding the usual cleaning process has been found to yield Schottky barriers of high values on p-type silicon. This procedure produces a passivated surface layer which has resulted in Al/0-Si Schottky diodes with barrier height of 0.75 eV and ideality factor of 1.15. Measurements have confirmed the presence of electrically active donor-like states in this surface layer. The origin of the donor states is explained in terms of the deactivation of the boron acceptor by the formation ofH+B– pairs. |
| Keywords: | 73.30 |
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