不同温度下制备的CdTe薄膜对太阳电池光电性能的影响

在不同温度下用近空间升华法（CSS）制备了CdTe多晶薄膜，结合I-V，C-V特性及深能级瞬态谱研究了不同温度制备的CdTe薄膜对CdS/CdTe太阳电池性能的影响.结果表明，制备温度对电池组件的开路电压影响不大，对短路电流和填充因子有影响，CdTe薄膜的深中心对温度和频率的响应基本一致.580℃制备的样品暗饱和电流密度最小，载流子浓度较高，光电特性较好，而且空穴陷阱浓度较低，深中心复合作用较小.在此研究基础上制备出了面积为300 mm×400 mm 关键词： 制备温度 CdTe薄膜 深能级瞬态谱（DLTS） CdS/CdTe太阳电池

The effect of different preparation temperatures on the photoelectric properties of CdTe films and solar cells

In this research, the CdTe polycrystalline films are prepared at various temperatures by close-spaced sublimation. The experiment was conducted to investigate how difference in preparation temperature effects on CdTe/CdS solar cells by the characteration of I-V, C-V curves and deep level transient spectroscopy. The result shows that the difference of temperatures has some effect on I_(sc) and FF, but not on V_(oc). The samples prepared at 580℃ have lowest dark saturated current density, higher carrier concentration and the photovoltaic performance is preferable. The response of deep-level impurities in CdTe films is unchanged with temperature and frequency, but the sample prepared at 580℃ has less deep-level impurity recombination because of lower hole trap concentration. Then, the CdS/CdTe solar cells with large area of 300 mm × 400 mm have efficiency reaching 8.2 % by improving the uniformity of temperature field.