Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies on TiO2 and nitrogen doped TiO2 thin films

Anatase phase TiO₂ and nitrogen (N) doped TiO₂ thin films were synthesized by an ultrasonic spray pyrolysis technique on c-Si (100) substrates in the temperature range 300-550 °C. The former used a precursor solution of titanium oxy acetylacetonate in methanol whereas the later used a titanium oxy acetylacetonate hexamine mixture in methanol. Homogeneity across the film’s thickness and the nature of the film-substrate interface were studied by dynamic depth profiling acquired using secondary ion mass spectrometry SIMS. The stoichiometry and bonding state of various species present in the films were studied using X-ray photoelectron spectroscopy (XPS). N-doping was confirmed by both SIMS and XPS. XPS studies revealed that the nitrogen content of the films synthesized at 300 °C (3.2%) is high compared to that of films made at 350 °C (1.3%).