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Auger process in CdS/ZnS core-shell quantum dots
Authors:Ibtissem Zgaren  Jalloul Balti
Institution:
  • a Laboratoire de Physique des Matériaux, Faculté des Sciences de Bizerte, 7021 Jarzouna, Tunisia
  • b Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunisia
  • Abstract:Auger processes are investigated for CdS/ZnS core-shell quantum dots. Auger recombination (AR) lifetime and electron relaxation inside the core are computed. Using the effective-mass theory and by solving a three-dimension Schrödinger equation we predict the dependence of Auger relaxation on size of core-shell nanocrystals. We considered in this work different AR processes: the excited electron (EE), excited hole (EH), multiexciton AR type. Likewise, Auger multiexciton recombination rates are predicted for biexciton. Our results show that biexciton AR type is more efficient than the other AR process (excited electron (EE) and excited hole (EH)). We also found that electron Auger relaxation PS is very efficient in core-shell nanostructures.
    Keywords:A  II-VI semiconductors  A  Core-shell  D  Auger recombination  D  Auger relaxation
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