Defect induced ferromagnetism in carbon-doped ZnO thin films |
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| Authors: | Sadaf Akbar Manzar Abbas B Ali |
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| Institution: | a Department of Physics, Quaid-i-Azam University, Islamabad, Pakistanb Department of Physics, COMSATS Institute of Information Technology-CIIT, Islamabad, Pakistanc Department of Physics Engineering, Hacettepe University Beytepe Ankara, 06800, Turkeyd Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USAe Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA |
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| Abstract: | We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation. Magnetization, Hall effect, X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO. The samples were observed to have n-type conduction with the carrier concentration increasing with C doping. XPS does not give any evidence for C substituted at the O site, and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state. It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C4+). |
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| Keywords: | A Thin films A Semiconductor C Point defects C Grain boundaries |
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