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Diffusion and ballistic contributions of electron-electron interaction to the conductivity in an Al0.26Ga0.74N/AlN/GaN heterostructure
Authors:WZ Zhou  T Lin  G Yu  JX Duan  B Shen
Institution:
  • a College of Physics Science and Technology, Guangxi University, Nanning, Guangxi 530004, People’s Republic of China
  • b Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062, People’s Republic of China
  • c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
  • d State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China
  • Abstract:The results of an experimental study of quantum correction of electron-electron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped View the MathML source heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.
    Keywords:A  Heterojunctions  A  Nanostructures  D  Electron-electron interactions
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