A quantitative study on the effect of nitrogen concentration on two-dimensional electron gas (2DEG) mobility in a dilute nitride GaAsN/AlGaAs heterostructure |
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| Authors: | Hosein Eshghi Mahnaz Mootabian |
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| Institution: | Department of Physics, Shahrood University of Technology, Shahrood, Iran |
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| Abstract: | Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs1−xNx/Al0.38Ga0.62As samples (x=0, 0.1% and 0.4%) shows that, as x increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively. |
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| Keywords: | A Semiconductors A Nanostructures D Electronic transport |
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