(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy |
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| Authors: | F Xu PW Huang RT Huang TS Chin |
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| Institution: | a Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Chinab Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwanc Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwand Physics Department, Nanjing University, Nanjing 210093, China |
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| Abstract: | (In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along −110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires. |
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| Keywords: | A Magnetic semiconductor nanowire B Molecular-beam epitaxy C (In Mn)As D Self-alignment |
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