Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

Authors:	NM Shmidt EE Yakimov EB Yakimov

Institution:	^a A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia ^b Institute of Microelectronics Technology RAS, Chernogolovka, 142432, Russia ^c Department of Physical and Quantum Electronics, Moscow Institute of Physics and Technology, Institutski per. 9, Dolgoprudniy, Moscow region, 141700, Russia

Abstract:	The effect of low-energy electron-beam (e-beam) irradiation on the InGaN-related cathodoluminescence in multiple quantum well (MQW) InGaN/GaN light-emitting diode (LED) structures has been studied. It is shown that the e-beam exposure leads to an increase of emission intensity and to a formation of new blue-shifted emission bands. The changes observed were explained by the enhancement of In diffusion stimulated by excess carrier recombination.

Keywords:	A Quantum wells A Semiconductors C Scanning and transmission electron microscopy D Optical properties
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