Ab initio electronic band structure calculation of InP in the wurtzite phase |
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Authors: | Luis CO Dacal |
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Institution: | a Instituto de Estudos Avançados, IEAv-CTA, PO Box 6044, 12228-970, São José dos Campos - SP, Brazilb Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia, Spain |
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Abstract: | We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives , , and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (−1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light. |
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Keywords: | A Semiconductor A InP wurtzite D Electronic band structure |
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