Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers |
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| Authors: | X.Y. Chen J. Wang K.H. Wong C.L. Mak G.X. Chen J.M. Liu M. Wang Z.G. Liu |
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| Affiliation: | (1) National Laboratory of Solid State Microstructures Physics and Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China;(2) Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China |
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| Abstract: | Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07. PACS 68.55.Jk; 81.15.Fg; 77.84.Dy |
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