| Top Contact Pentacene Organic Thin Film Field Effect Transistors |
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| 作者姓名： | ZHANG Su-mei SHI Jia-wei SHI Ying-xue GUO Shu-xu LIU Ming-da MA Dong-ge CHEN Jiang-shan |
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| 作者单位： | 1. Nat. Key Lab. of Integrated Optoelectron.，College of Electron. and Eng.，Jilin University，Changchun 130023，CHN; 2. Changchun Institute of Appl. Chem.，Chinese Academy of Sciences，Changchun 130021，CHN |
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| 基金项目： | 国家自然科学基金，Creative Foundation of Jilin University |
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| 摘 要： | Using pentacene as an active material, the organic thin film transistors were fabricated on Si_(3)N_(4)/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited (PECVD) silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field effect mobility and threshold voltage are 0.043 cm~2/(V·s) and 12.6 V, respectively, and on-off current ratio is nearly 1×10~(3).
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| 关 键 词： | 有机薄膜 并五苯 晶体管 PECVD Si掺杂 |
| 收稿时间： | 2004/3/15 |
Top Contact Pentacene Organic Thin Film Field Effect Transistors |
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| ZHANG Su-mei,SHI Jia-wei,SHI Ying-xue,GUO Shu-xu,LIU Ming-da,MA Dong-ge,CHEN Jiang-shan.Top Contact Pentacene Organic Thin Film Field Effect Transistors[J].Semiconductor Photonics and Technology,2004,10(4):265-267. |
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| Authors: | ZHANG Su-mei SHI Jia-wei SHI Ying-xue GUO Shu-Xu LIU Ming-Da MA Dong-ge CHEN Jiang-shan |
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| Abstract: | Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited (PECVD) silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field respectively, and on-off current ratio is nearly 1×103. |
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| Keywords: | Organic thin film Pentacene Transistors |
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