Facilely synthesized N-doped graphene sheets and its ferromagnetic origin

Inducing ferromagnetism into graphene is vital today because it has a wide range of applications such as spintronics devices and magnetic memory devices. In this paper, we will report a new method to synthesize ferromagnetic graphene by nitrogen doping. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were utilized to testify the N-doped material and further discuss the N-doped process. The superconducting quantum interference device (SQUID) was put in and used to analyze the magnetic properties of the N-doped graphene sheets. It shows that the material exhibits ferromagnetism at both 3 K and 300 K and the ferromagnetic saturation moment is 0.412 emu/g and 0.051 emu/g, respectively. The mechanism of the origin of the ferromagnetism in N-doped graphene sheets will also be discussed in this paper. It shows that, when the amount graphitic N reached the threshold, the origin of the ferromagnetism will change from defects induced by nitrogen atoms to the transition in energy band caused by graphitic N.