New n-type semiconductor material based on styryl fullerene for organic field-effect transistors |
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| Institution: | 1. Institute of Petrochemistry and Catalysis, Russian Academy of Sciences, 450075 Ufa, Russian Federation;2. Institute of Physics and Technology, Bashkir State University, 450076 Ufa, Russian Federation |
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| Abstract: | Organic field-effect transistors with styryl fullerene as a semi conductor layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 ± 10% cm2 V?1 s?1, whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 ± 10% cm2 V?1 s?1). |
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| Keywords: | [60]fullerene styryl fullerene PCBM organic semiconductor organic field-effect transistor electron mobility |
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