Thickness dependence of exciton absorption in pure GaAs crystals at the “prequantum” limit |
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| Authors: | G N Aliev N V Luk’yanova R P Seisyan |
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| Institution: | (1) Kh. I. Amirkhanov Physics Institute, Russian Academy of Sciences, 367000 Makhachkala, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The optical absorption of GaAs crystals with thicknesses d=0.4−4.4 μm is measured in the exciton-polariton resonance region at a temperature of 1.7 K. As the thickness is reduced,
both a broadening of the exciton line and increased absorption with a negligible Stark shift are observed. The way the absorption
spectra vary with crystal thickness is examined in terms of a competition between two regions for light-exciton interactions
in the crystal: in the field of surface charges and electric-field free.
Fiz. Tverd. Tela (St. Petersburg) 40, 869–871 (May 1998) |
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