Correction: Crystal structure and metallization mechanism of the π-radical metal TED

Radical electrons tend to localize on individual molecules, resulting in an insulating (Mott–Hubbard) bandgap in the solid state. Herein, we report the crystal structure and intrinsic electronic properties of the first single crystal of a π-radical metal, tetrathiafulvalene-extended dicarboxylate (TED). The electrical conductivity is up to 30 000 S cm⁻¹ at 2 K and 2300 S cm⁻¹ at room temperature. Temperature dependence of resistivity obeys a T³ power-law above T > 100 K, indicating a new type of metal. X-ray crystallographic analysis clarifies the planar TED molecule, with a symmetric intramolecular hydrogen bond, is stacked along longitudinal (the a-axis) and transverse (the b-axis) directions. The π-orbitals are distributed to avoid strong local interactions. First-principles electronic calculations reveal the origin of the metallization giving rise to a wide bandwidth exceeding 1 eV near the Fermi level. TED demonstrates the effect of two-dimensional stacking of π-orbitals on electron delocalization, where a high carrier mobility of 31.6 cm² V⁻¹ s⁻¹ (113 K) is achieved.

The molecular arrangement that enables metallic conduction in a single-component pure organic crystal is revealed by single-crystal X-ray diffraction.

Organic molecular solids are typically insulating due to their paired electrons in spatially localized s- and p-orbitals. The concept of charge-transfer (CT) between donor and acceptor¹ enabled the development of conducting molecular complexes (salts) including semiconducting perylene-bromine,² metallic tetrathiafulvalene (TTF)-tetracyano-p-quinodimethane (TCNQ),³ and polyacethylene doped with halogen molecules.⁴ A different strategy was proposed in the 1970s based on organic radicals with an open-shell electronic structure.⁵ π-Radicals such as neutral-,⁶ fully-conjugated⁷ and zwitterionic (betainic)⁸ molecules, with an unpaired electron in their singly occupied molecular orbital (SOMO), offered potential candidates. However, all these π-radicals were insulators or semiconductors with a finite bandgap, which is due to the SOMO being localized on an individual molecule. In the Mott–Hubbard model,⁹ the case of the π-radical solids can be described by the on-site Coulomb repulsion U being larger than the electronic bandwidth W (U/W > 1), in contrast to U/W < 1 in molecular metals like CT metal systems (Fig. 1a).Open in a separate windowFig. 1(a) Schematic representation of the electronic band structure of Mott–Hubbard insulators (left) and possible molecular metals (right), respectively. Solids formed from typical π-radicals possess large on-site Coulomb repulsion U compared with the electronic bandwidth W, resulting a finite bandgap (left). This requires a new mechanism to expand W and overcome U to achieve a metallic state at ambient pressure in π-radical crystals. (b) Molecular structure of the zwitterionic radical, tetrathiafulvalene-extended dicarboxylate (TED) with a symmetric intramolecular hydrogen bond.A straightforward approach to realize high conductivity in π-radical systems is to enhance the intermolecular interaction by applying high pressure.¹⁰ Bisdithiazolyl radical crystal achieved W ∼ 1 eV near the Fermi level and the room temperature conductivity σ_RT = 2 S cm⁻¹ under 11 GPa pressure.^10c An alternative route is to decrease the interatomic spacing by incorporating a metal ion. Introduction of a semimetal Se and intermolecular hydrogen bonding in a donor-type radical succeeded to improve a conductivity to σ_RT = 19 S cm⁻¹ but still required high pressure over 1 GPa for breaking its insulating character.^10d An organometallic compound with a transition metal, Ni(tmdt)₂], by contrast, is known to form a three-dimensional (3D) Fermi surface with W = 0.48 eV and metallic conduction with σ_RT = 400 S cm⁻¹ at ambient pressure.¹¹ A breakthrough concept for expanding W at ambient pressure is desired for achieving metallization in pure organic π-radicals.Tetrathiafulvalene-extended dicarboxylate (TED) is an organic air-stable zwitterionic radical (Fig. 1b),¹² which was designed based on carrier generation induced by a stably-introduced protonic defect (–H⁺) in hydrogen-bonding molecules without adopting CT between multiple molecules.¹³ A polycrystalline film of TED exhibited metallic conduction at ambient pressure, but the mechanism has not been clarified yet due to lack of single crystal information.¹² Herein, we report the first crystal structure and intrinsic electronic properties of the recently grown single crystal TED. Structural analysis and quantum chemical simulations based on the single crystal reveal the origin of its metallic behavior.