Extremely low-frequency phonon material and its temperature- and photo-induced switching effects |
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Authors: | Takaya Yoshida Koji Nakabayashi Hiroko Tokoro Marie Yoshikiyo Asuka Namai Kenta Imoto Kouji Chiba Shin-ichi Ohkoshi |
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Affiliation: | Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 Japan.; Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba Ibaraki 305-8573 Japan ; Material Science Div., MOLSIS Inc., Tokyo Daia Bldg., 1-28-38 Shinkawa, Chuo-ku, Tokyo 104-0033 Japan |
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Abstract: | Atomic vibrations due to stretching or bending modes cause optical phonon modes in the solid phase. These optical phonon modes typically lie in the frequency range of 102 to 104 cm−1. How much can the frequency of optical phonon modes be lowered? Herein we show an extremely low-frequency optical phonon mode of 19 cm−1 (0.58 THz) in a Rb-intercalated two-dimensional cyanide-bridged Co–W bimetal assembly. This ultralow frequency is attributed to a millefeuille-like structure where Rb ions are very softly sandwiched between the two-dimensional metal–organic framework, and the Rb ions slowly vibrate between the layers. Furthermore, we demonstrate temperature-induced and photo-induced switching of this low-frequency phonon mode. Such an external-stimulation-controllable sub-terahertz (sub-THz) phonon crystal, which has not been reported before, should be useful in devices and absorbers for high-speed wireless communications such as beyond 5G or THz communication systems.Extremely low-frequency optical phonon mode in Rb-intercalated two-dimensional cyanide-bridged Co–W bimetal assembly and its temperature- and photo-induced switching effect. |
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