Effect of magnetic quantization on the Einstein relation in Kane-type semiconductors |
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Authors: | M. Mondal K. P. Ghatak |
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Affiliation: | (1) Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, 700009 Calcutta, India;(2) Institute of Radio Physics and Electronics, University College of Sciences and Technology, 92, Acharya Prafulla Chandra Road, 700009 Calcutta, India |
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Abstract: | An attempt is made to formulate the Einstein relation for the diffusivity-mobility ratio of the carriers in degenerate semiconductors having Kane-type energy bands in the presence of a quantizing magnetic field, taking degenerate n-InAs as an example. It is found on the basis of the three-band Kane model, which is the most valid model for n-InAs, that the same ratio oscillates with changing magnetic field only under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived. |
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