Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering |
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Authors: | H Akazawa M Shimada |
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Institution: | NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan |
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Abstract: | Thin films of crystalline lithium niobate (LN) grown on Si(1 0 0) and SiO2 substrates by electron cyclotron resonance plasma sputtering exhibit distinct interfacial structures that strongly affect the orientation of respective films. Growth at 460–600 °C on the Si(1 0 0) surface produced columnar domains of LiNbO3 with well-oriented c-axes, i.e., normal to the surface. When the SiO2 substrate was similarly exposed to plasma at temperatures above 500 °C, however, increased diffusion of Li and Nb atoms into the SiO2 film was seen and this led to an LN–SiO2 alloy interface in which crystal-axis orientations were randomized. This problem was solved by solid-phase crystallization of the deposited film of amorphous LN; the degree of c-axis orientation was then immune to the choice of substrate material. |
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Keywords: | A3 Sputtering B1 Lithium compounds B2 Opto-electric materials |
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