Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor |
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Authors: | V I Gaman |
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Institution: | 1.National Research Tomsk State University,Tomsk,Russia |
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Abstract: | Analytical expressions describing dependences of the surface density of adsorbed oxygen ions and energy band bending in the
subsurface region of a metal oxide semiconductor on the oxygen concentration that consider not only the process of neutral
gas particle adsorption, but also their charge transfer at the expense of electron capture from the conduction band are presented.
It is demonstrated that the heat of oxygen ion absorption is equal to the sum of the heat of neutral particle adsorption and
the energy gap between the Fermi level and the level of the oxygen ion on the semiconductor surface. When the adsorption equilibrium
is established, an analytical expression describing the time dependence of the energy band bending can be obtained only for
small change of the oxygen concentration in the gas mixture. |
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Keywords: | |
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