| N掺杂ZnO薄膜的荧光特性研究 |
| |
| 引用本文： | 王金香,沈洪雪,彭小波,王芸,刘银.N掺杂ZnO薄膜的荧光特性研究[J].光子学报,2012,41(8):932-935. |
| |
| 作者姓名： | 王金香 沈洪雪 彭小波 王芸 刘银 |
| |
| 作者单位： | 1. 安徽理工大学材料科学与工程学院,安徽淮南,232001
2. 中国建材国际工程集团有限公司,浮法玻璃新技术国家重点实验室,安徽蚌埠233018 |
| |
| 基金项目： | 安徽省自然科学基金(No.1208085ME84)资助 |
| |
| 摘 要： | 以N2为掺杂源,通过改变O2∶N2比,利用射频磁控溅射法在玻璃衬底上制备了具有002]择优取向的N掺杂ZnO薄膜,研究了ZnO薄膜的光致发光谱随着N掺入量的不同而变化的规律.结果表明,薄膜主衍射峰为402 nm处的发光峰；由于N掺杂量的不同,有的薄膜在445 nm和524 nm处也有发光发存在,但随着薄膜N含量的不同,其发光峰强度明显不同,其峰位也发生了相应的红移或者蓝移.当O2∶N2为10∶ 15时,制备的薄膜N掺杂量最大,光学性能最好,此工艺为研究ZnO薄膜的缺陷类型及导电类型提供了重要的研究参考.
|
| 关 键 词： | 氮掺杂 磁控溅射 光致发光谱 受主杂质 蓝移 |
| 收稿时间： | 2012/4/9 |
Fluorescence Emission Properties of N-doped ZnO Films |
| |
| WANG Jin-xiang
,
SHEN Hong-xue
,
PENG Xiao-bo
,
WANG Yun
,
LIU Yin.Fluorescence Emission Properties of N-doped ZnO Films[J].Acta Photonica Sinica,2012,41(8):932-935. |
| |
| Authors: | WANG Jin-xiang SHEN Hong-xue PENG Xiao-bo WANG Yun LIU Yin |
| |
| Institution: | 1(1 School of Materials Science and Engineering,Anhui University of Science and Technology,Huainan,Anhui 232001,China)(2 State Key Laboratory of Advanced Technology for Float Glass,China Triumph International Engineering Co-Ltd,Bengbu,Anhui 233018,China) |
| |
| Abstract: | Using N2 as a doped source to prepare ZnO films, the N-doped ZnO films with strong (002) preferred orientation were deposited on quartz glass substrate by RF magnetron sputtering through changing the ration of O2∶N2. The result shows that the films have a main peak at 402 nm; they have other peaks at 445 nm, 524 nm with the different contents of N, and the intensity of the films are different too; the peak position also produced corresponding red shift or blue shift. When O2∶N2 is 10∶15, the N doping amount of the film is the largest, and the optical performance is the best. The proposed research provides an important reference for the type of ZnO film defect and conductive. |
| |
| Keywords: | N-doped Magnetron sputtering Photoluminescence Acceptor impurity Blue shift |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
