SOI全介质隔离与高频互补双极兼容工艺

ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径，从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。

A Compatible Technology of SOI Full Dielectric Isolation with Complementary Bipolar Process

To develop a new generation of wide-band, high-speed operational amplifier, new approaches are needed. The high-frequency complementary bipolar process has the advantage of achieving high fT npn and pup transistors with extremely small parasitic capacitance,and siliconon-insulator full dielectric isolation is an excellent isolation technique.Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transistors with fT up to 1 GHz have been fabricated in the experimentation.