Experimental and theoretical investigation of formation of the oxygen-containing precipitate-dislocation loop system in silicon |
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Authors: | R V Goldstein M V Mezhennyi M G Mil’vidskii V Ya Reznik K B Ustinov P S Shushpannikov |
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Institution: | 1.Institute for Problems in Mechanics,Russian Academy of Sciences,Moscow,Russia;2.Federal State Research and Design Institute of Rare Metal Industry “Giredmet”,Moscow,Russia |
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Abstract: | A model of coherent and incoherent oxygen-containing precipitates formed in an anisotropic silicon crystal due to the decomposition
of a supersaturated oxygen solid solution has been considered. The stresses acting inside and outside the precipitate have
been determined in the framework of the classical Eshelby’s approach. A criterion has been proposed for the generation of
the misfit dislocation and the onset of motion of the perfect interstitial dislocation loop lying in the precipitate plane.
The proposed precipitate model and criterion have been used for determining the dependence of the precipitate radius that
corresponds to the formation of the misfit dislocation and the onset of motion of the perfect interstitial dislocation loop
when an external load is applied to the sample. The results obtained are compared with the available experimental data. |
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