Mobility of 2D-electrons in scattering on a correlated distribution of impurity ions in doped thin layers

The spatial correlations of impurity ions in doped thin layers have been considered. A model of hard spheres on the plane has been developed for describing the correlations. In this model, an analytical expression has been obtained for the structure factor of 2D-electrons. The concentration dependences of the mobility of 2D-electrons in heterostructures with separate doping have been investigated using Al _x Ga_{1 − x} As/GaAs as an example.