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Synthesis and characterisation of Hf(thd)2X2 derivatives [X = N(SiMe3)2, OSiMe3 and OSiBuMe2] as precursors for MOCVD of hafnium silicate films |
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| Authors: | Liliane G Hubert-Pfalzgraf Nadia Touati Sergej V Pasko J Vaissermann Adulfas Abrutis |
| Institution: | aUniversité Lyon 1, IRC, 2 Av. A. Einstein, 69626 Villeurbanne Cédex, France bDepartment of Chemistry, Vilnius University, Naugarduko 24, Vilnius, Lithuania cUniversité Paris 6, Laboratoire de Chimie Inorganique et des matériaux Moléculaires, UMR-CNRS, 4 Place Jussieu, 75 Paris Cédex, France |
| Abstract: | Hafnium β-diketonatochlorides HfCl2(thd)2 (1), HfCl(thd)3 (2) as well as β-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)2N(SiMe3)2]2 (3), Hf(thd)2(OSiMe3)2 (4) and Hf(thd)2(OSitBuMe2)2 (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, 1H NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSixOy films by pulsed liquid injection MOCVD on Si(1 0 0) and R plane sapphire. The as-deposited at 600–800 °C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7–0.85) and smooth. |
| Keywords: | Hafnium Silicate Diketonate Silyloxide Silylamide MOCVD Structure |
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