Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor |
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| Authors: | M -H Yu Seyidov R A Suleymanov F Salehli S S Babayev T G Mammadov A I Nadjafov and G M Sharifov |
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| Institution: | (1) Department of Physics, Gebze Institute of Technology, Gebze, Kocaeli, Turkey;(2) Istanbul Technical University, Maslak, Istanbul, Turkey;(3) Institute of Physics, National Academy of Sciences of Azerbaijan, pr. Djavida 33, Baku, AZ-143, Azerbaijan |
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| Abstract: | The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning
of the soliton superstructure by a defect density wave in the internal field of the electret state.
Original Russian Text ? M.-H. Yu. Seyidov, R.A. Suleymanov, F. Salehli, S.S. Babayev, T.G. Mammadov, A.I. Nadjafov, G.M. Sharifov,
2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 533–542. |
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