| 快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响 |
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| 引用本文： | 吴冬冬,杨德仁,席珍强,阙端麟.快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响[J].半导体学报,2006,27(3). |
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| 作者姓名： | 吴冬冬 杨德仁 席珍强 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 广东省博士启动基金，浙江省自然科学基金，中国科学院资助项目 |
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| 摘 要： | 研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响.实验结果表明:在快速热处理工艺下,间隙铜对氧沉淀几乎没有影响,铜沉淀却能显著地促进氧沉淀的形成;而间隙镍或镍沉淀对氧沉淀的形成都没有影响.基于实验结果并结合氧沉淀的形核理论,对金属铜、镍对氧沉淀的影响机理进行了解释.
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| 关 键 词： | 单晶硅 氧沉淀 Cu Ni |
Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing |
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| Wu Dongdong,Yang Deren,Xi Zhenqiang,Que Duanlin.Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing[J].Chinese Journal of Semiconductors,2006,27(3). |
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| Authors: | Wu Dongdong Yang Deren Xi Zhenqiang Que Duanlin |
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| Abstract: | The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated. It is found that interstitial copper has almost no effect on oxygen precipitation, but copper precipitation markedly enhances oxygen precipitation. However, neither interstitial nickel nor nickel precipitation affects oxygen precipitation. The reasons for the effects of copper and nickel contamination on oxygen precipitation are discussed in light of oxygen precipitation nucleation theory. |
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| Keywords: | Si oxygen precipitation Cu Ni |
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