| 一种用于地面和有线接收机的宽带低噪声放大器 |
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| 引用本文： | 马德胜,石寅,代伐.一种用于地面和有线接收机的宽带低噪声放大器[J].半导体学报,2006,27(6). |
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| 作者姓名： | 马德胜 石寅 代伐 |
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| 作者单位： | 中国科学院半导体研究所,人工神经网络与高速电路实验室,北京,100083;奥本大学电子工程与计算机科学系,奥本,36849-5201,美国 |
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| 摘 要： | 提出并设计了一种用于数字电视接收调谐芯片的宽带低噪声放大器.该设计采用0.35μm SiGe BiCMOS工艺,器件的主要性能为:增益等于18.8dB,增益平坦度小于1.4dB,噪声系数小于5dB,1dB压缩点为-2dBm,输入三阶交调为8dBm.在5V供电的情况下,直流功耗为120mW.
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| 关 键 词： | BiCMOS 宽带 噪声系数 线性度 低噪声放大器 SiGe |
A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions |
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| Ma Desheng,Shi Yin,Dai Fa Foster.A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions[J].Chinese Journal of Semiconductors,2006,27(6). |
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| Authors: | Ma Desheng Shi Yin Dai Fa Foster |
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| Abstract: | We present the design of a wide-band low-noise amplifier (LNA) implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ～ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply. |
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| Keywords: | BiCMOS wide band noise figure linearity low-noise amplifier SiGe |
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