Ion-beam sputtering deposition of CsI thin films |
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| Authors: | MA Nitti A Valentini GS Senesi G Ventruti E Nappi G Casamassima |
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| Institution: | (1) INFN-Sezione di Bari, Dipartimento Interateneo di Fisica, Via Amendola 173, 70126 Bari, Italy;(2) Istituto di Metodologie Inorganiche e dei Plasmi/CNR, Dipartimento di Chimica, Via Orabona 4, 70126 Bari, Italy;(3) Dipartimento Geomineralogico, Via Orabona 4, 70126 Bari, Italy |
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| Abstract: | Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE . PACS 81.15.-z; 79.60.Dp; 68.37.Ps |
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