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Influence of Low Axial Temperature Gradient on Ga-Doped Germanium Crystal Growth by the Vertical Bridgman Method
Authors:Kozhemyakin  G. N.  Strelov  V. I.  Sidorov  V. S.  Korobeynikova  E. N.
Affiliation:1.Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”, Russian Academy of Sciences, 119333, Moscow, Russia
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Abstract:Crystallography Reports - The influence of a low axial temperature gradient on the growth of the Ge:Ga crystal by the vertical Bridgman technique was investigated. The axial temperature gradient of...
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