| 互补金属氧化物半导体器件空间低剂量率辐射效应预估模型研究 |
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| 引用本文： | 何宝平,姚志斌. 互补金属氧化物半导体器件空间低剂量率辐射效应预估模型研究[J]. 物理学报, 2010, 59(3): 1985-1990 |
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| 作者姓名： | 何宝平 姚志斌 |
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| 作者单位： | 西北核技术研究所,西安 710613 |
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| 基金项目： | 国防预研基金（批准号:311060403）资助的课题. |
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| 摘 要： | 给出了一种新的预估互补金属氧化物半导体器件(CMOS器件)空间低剂量率辐射效应模型,相对线性响应预估模型,该模型在预估CMOS器件低剂量率辐射效应方面更接近实际试验结果,且不同剂量率辐射试验结果证实了所建模型的正确性.最后利用新建模型对处于空间低剂量率环境下CMOS器件的敏感参数进行了预估.
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| 关 键 词： | 电离辐射 总剂量 低剂量率 预估方法 |
| 收稿时间： | 2009-03-06 |
Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment |
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| He Bao-Ping,Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment[J]. Acta Physica Sinica, 2010, 59(3): 1985-1990 |
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| Authors: | He Bao-Ping Yao Zhi-Bin |
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| Abstract: | A new model is presented to predict the radiation response for complementary metal oxide semiconductor (CMOS)devices at low dose rate in space environment. In comparison with the linear system response theory model, the prediction results for CMOS devices at low dose rate radiation by using the new model are more close to actually experiment data, and the experimental results for different dose rate of radiation verify the accuracy of the model. Finally, the radiation effects on sensitive parameters of CMOS... |
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| Keywords: | ionizing radiation total dose low dose rate prediction method |
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