Geometry and electronic structure of impurity-trapped excitons in Cs2GeF6:U4+ crystals. The 5f17s1 manifold

Excitons trapped at impurity centers in highly ionic crystals were first described by McClure and Pedrini Phys. Rev. B 32, 8465 (1985)] as excited states consisting of a bound electron-hole pair with the hole localized on the impurity and the electron on nearby lattice sites, and a very short impurity-ligand bond length. In this work the authors present a detailed microscopic characterization of impurity-trapped excitons in U(4+)-doped Cs(2)GeF(6). Their electronic structure has been studied by means of relativistic ab initio model potential embedded cluster calculations on (UF(6))(2-) and (UF(6)Cs(8))(6+) clusters embedded in Cs(2)GeF(6), in combination with correlation methods based on multireference wave functions. The local geometry of the impurity-trapped excitons, their potential energy curves, and their multielectronic wave functions have been obtained as direct, nonempirical results of the methods. The calculated excited states appear to be significantly delocalized outside the UF(6) volume and their U-F bond length turns out to be very short, closer to that of a pentavalent uranium defect than to that of a tetravalent uranium defect. The wave functions of these excited states show a dominant U 5f(1)7s(1) configuration character. This result has never been anticipated by simpler models and reveals the unprecedented ability of diffuse orbitals of f-element impurities to act as electron traps in ionic crystals.