Tuning of graphitic carbon nitride (g-C3N4) for photocatalysis: A critical review

Graphitic carbon nitride (g-C₃N₄) is a remarkable semiconductor catalyst that has attracted widespread attention as a visible light photo-responsive, metal-free, low-cost photocatalytic material. Pristine g-C₃N₄ suffers fast recombination of photogenerated electron-hole pairs, low surface area, and insufficient visible light absorption, resulting in low photocatalytic efficiency. This review presents the recent progress, perspectives, and persistent challenges in the development of g-C₃N₄-based photocatalytic materials. Several approaches employed to improve the visible light absorption of the materials including metal and non-metal doping, co-doping, and heterojunction engineering have been extensively discussed. These approaches, in general, were found to decrease the material’s bandgap, increase the surface area, reduce charge carrier recombination, and promote visible light absorption, thereby enhancing the overall photocatalytic performance. The material has been widely used for different applications such as photocatalytic hydrogen production, water splitting, CO₂ conversion, and water purification. The work has also identified various limitations and weaknesses associated with the material that hinders its maximum utilization under visible illumination and presented state-of-the-art solutions that have been reported recently. The summary presented in this review would add an invaluable contribution to photocatalysis research and facilitate the development of efficient visible light-responsive semiconducting materials.