Charge state dependent energy deposition by ion impact |
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Authors: | Lake R E Pomeroy J M Grube H Sosolik C E |
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Affiliation: | Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. russell.lake@nist.gov |
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Abstract: | We report on a measurement of craters in thin dielectric films formed by Xe(Q+) (26 ≤ Q ≤ 44) projectiles. Tunnel junction devices with ion-irradiated barriers were used to amplify the effect of charge-dependent cratering through the exponential dependence of tunneling conductance on barrier thickness. Electrical conductance of a crater σ(c)(Q) increased by 4 orders of magnitude (7.9 × 10(-4) μS to 6.1 μS) as Q increased, corresponding to crater depths ranging from 2 to 11 ?. By employing a heated spike model, we determine that the energy required to produce the craters spans from 8 to 25 keV over the investigated charge states. Considering energy from preequilibrium nuclear and electronic stopping as well as neutralization, we find that at least (27 ± 2)% of available projectile neutralization energy is deposited into the thin film during impact. |
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