| 溅射法制备a-GaN薄膜的光学性质 |
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| 引用本文： | 贾璐,谢二庆,潘孝军,张振兴.溅射法制备a-GaN薄膜的光学性质[J].半导体学报,2006,27(13):109-112. |
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| 作者姓名： | 贾璐 谢二庆 潘孝军 张振兴 |
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| 作者单位： | 兰州大学物理科学与技术学院，兰州 730000;兰州大学物理科学与技术学院，兰州 730000;兰州大学物理科学与技术学院，兰州 730000;兰州大学物理科学与技术学院，兰州 730000 |
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| 摘 要： | 利用直流磁控溅射方法制备了非晶氮化镓（a-GaN）薄膜.X射线衍射分析以及傅里叶变换红外吸收谱表明薄膜是非晶结构.通过紫外-可见光谱测量得到，样品随着衬底温度的升高而变厚，光学带隙随着衬底温度的升高而变小，Ar对薄膜的光学带隙和表面粗糙程度有很大的影响.
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| 关 键 词： | 直流溅射 a-GaN薄膜 光学带隙 吸收系数 |
Optical Properties of a-GaN Deposited by Sputtering |
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| Jia Lu,Xie Erqing,Pan Xiaojun and Zhang Zhenxing.Optical Properties of a-GaN Deposited by Sputtering[J].Chinese Journal of Semiconductors,2006,27(13):109-112. |
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| Authors: | Jia Lu Xie Erqing Pan Xiaojun and Zhang Zhenxing |
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| Institution: | School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China |
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| Abstract: | GaN films are deposited by direct current reactive sputtering.X-ray diffraction (XRD),Fourier infrared absorption spectrum (FTIR),and UV-VIS spectrum are carried out.The XRD patterns indicate that the GaN films deposited at room temperature have amorphous structures.The UV-VIS spectrum indicates that the sample is thicker with increasing substrate temperature,but the optical bandgap is narrower.Ar pressure has a big influence on the bandgap and the roughness of the films. |
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| Keywords: | sputter a-GaN optical bandgap absorption coefficient |
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