Estimation of applicability of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in isotropic polycrystalline <Emphasis Type="Italic">p-</Emphasis>silicon

A condition is formulated for application of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in an isotropic silicon polycrystal, where holes are scattered both by a disordered system of potential barriers formed on crystallite surfaces and by a disordered lattice of silicon atoms characterized by local ordering. The total specific resistance of p-type isotropic polycrystalline silicon is estimated for the grain size d = 230 ?, temperature T = 300 K, and hole concentration p = (5.0 – 10.0) ⋅ 10¹⁹ cm⁻³. The calculated specific resistances of p-type polycrystalline silicon are compared with the experimental data.