Electronic structure of GaxIn1-xAsySb1-y quaternary alloy by recursion method

Summary  This work reports the electronic structure of GaInAsSb quaternary alloy by recursion method. A five-orbital sp₃s^* per atom model was used in the tight-binding representation of the Hamiltonian. The local density of states (LDOS), integrated density of states (IDOS) and structural energy (ST.E) were calculated for Ga, In, As and Sb sites in Ga_0.5 In_0.5 As_0.5 Sb_0.5 and GaInAsSb lattice matched to GaAs and the same alloy lattice matched to GaSb. There are 216 atoms in our cluster arranged in a zincblend structure. The results are in good agreement with available information about the alloy.