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镁离子掺杂多孔硅的蓝光发射
引用本文:孙小菁,马书懿,张汉谋,徐小丽,魏晋军. 镁离子掺杂多孔硅的蓝光发射[J]. 人工晶体学报, 2007, 36(4): 926-930
作者姓名:孙小菁  马书懿  张汉谋  徐小丽  魏晋军
作者单位:西北师范大学物理与电子工程学院,兰州,730070;西北师范大学物理与电子工程学院,兰州,730070;西北师范大学物理与电子工程学院,兰州,730070;西北师范大学物理与电子工程学院,兰州,730070;西北师范大学物理与电子工程学院,兰州,730070
基金项目:国家自然科学基金;教育部科学技术研究重点项目;甘肃省重点实验室基金
摘    要:用电化学方法对多孔硅薄膜进行了镁离子的化学掺杂.用荧光分光光度计分析了样品的光致发光特性,发现镁掺杂增强了多孔硅的蓝光发射,当镁离子浓度增大到0.002mol/L时,可使蓝光强度达到多孔硅红光强度的一半.红外吸收谱表明,掺镁多孔硅的表面形成较完整的Si-O-Si网络结构,分析结果认为,多孔硅的蓝光光激发主要发生在多孔硅的纳米硅粒中,光发射主要发生在多孔硅中包裹纳米硅SiOx层中的发光中心上,对实验结果进行了合理的解释.

关 键 词:多孔硅  镁离子掺杂  电化学  光致发光  红外吸收
文章编号:1000-985X(2007)04-0926-05
修稿时间:2006-12-25

Blue Photoluminescence from Magnesium-doped Porous Silicon
SUN Xiao-jing,MA Shu-yi,ZHANG Han-mou,XU Xiao-li,WEI Jin-jun. Blue Photoluminescence from Magnesium-doped Porous Silicon[J]. Journal of Synthetic Crystals, 2007, 36(4): 926-930
Authors:SUN Xiao-jing  MA Shu-yi  ZHANG Han-mou  XU Xiao-li  WEI Jin-jun
Affiliation:College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China
Abstract:Magnesium ions were embedded into porous silicon films by electrochemical method.Scanning probe microscope was used to characterize the surface morphology of films.Fluorescence photo-spectrometer was used to research the photoluminescence properties of the samples.The blue emission of porous silicon was enhanced as magnesium ions' doping.When the concentration of magnesium ions increased to 0.002mol/L,the intensity of the blue light approached half of the red light intensity of the porous silicon without doping.The FTIR showed that the surface of magnesium-doped porous silicon have formed a goodish integrated cross-linked Si-O-Si network.It is concluded that the blue light excitation mainly occurred inside the silicon nanoparticles in porous silicon;however,the emission occurred in the luminescence centers in SiOx layers covering silicon nanoparticles.The experimental results have been explained reasonably.
Keywords:porous silicon  magnesium ions dopant  electrochemistry  photoluminescence  FTIR
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