Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation |
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| Authors: | XW Du Y Jin YS Fu |
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| Institution: | a School of Materials Science and Engineering, Tianjin University, Tianjin 300072, People's Republic of China
b Department of Chemistry, University of British Columbia, 2036 Main Mall, Vancouver, British Columbia, Canada V6T 1Z1 |
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| Abstract: | Porous silicon (PS) was irradiated by three kinds of low-energy ions with different chemical activity, namely argon ions, nitrogen ions and oxygen ions. The chemical activity of ions has significant effect on the surface states and photoluminescence (PL) properties of PS, The photoluminescence quenching after argon ions and nitrogen ions irradiation is ascribed to the broken Si-Si bonds, while the PL recovery is attributed to the oxidation of Si-H back bonds. Oxygen ions irradiation leads to the formation of a SiOx layer with oxygen defects and PS shows different PL evolution than PS irradiated by argon ions and nitrogen ions. |
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| Keywords: | Porous silicon Optical properties Fourier transform infrared spectroscopy (FTIR) |
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