Influence of substrate temperature on electrical and optical properties of p-type semitransparent conductive nickel oxide thin films deposited by radio frequency sputtering |
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Authors: | Lei Ai Guojia Fang Longyan Yuan Mingjun Wang Qilin Zhang Xingzhong Zhao |
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Institution: | a Key Lab of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Electronic Science & Technology, School of Physical Science & Technology, Wuhan University, Wuhan 430072, PR China b State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050, PR China |
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Abstract: | Nickel oxide thin films were deposited on fused silica and Si(1 0 0) substrates at different substrate temperatures ranging from room temperature to 400 °C using radio frequency reactive magnetron sputtering from a Ni metal target in a mixture of O2 and Ar. With the increase of substrate temperature, nickel oxide films deposited on the Si substrates exhibit transition from amorphous to poly-crystalline structures with different preferred orientations of NiO(2 0 0) and (1 1 1). The films deposited at higher temperature exhibit higher Ni2+/Ni3+ ratio. With substrate temperature increasing from room temperature to 400 °C, the electrical resistivities of nickel oxide films increase from (2.8 ± 0.1) × 10−2 to (8.7 ± 0.1) Ω cm, and the optical band-gap energies increase from 3.65 to 3.88 eV. A p-nickel oxide/n-zinc oxide heterojunction was fabricated to confirm the p-type conduction of nickel oxide thin film, which exhibited a steadily rectifying behavior. |
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Keywords: | 73 61 Le 72 80 Jc 78 66 Li |
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