A Delamination Strategy for Thinly Layered Defect‐Free High‐Mobility Black Phosphorus Flakes |
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| Authors: | Sheng Yang Ke Zhang Antonio Gaetano Ricciardulli Panpan Zhang Dr Zhongquan Liao Dr Martin R Lohe Prof Ehrenfried Zschech Prof Paul W M Blom Prof Wojciech Pisula Prof Klaus Müllen Prof Xinliang Feng |
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| Institution: | 1. Chair for Molecular Functional Materials and Center for Advancing Electronics Dresden (cfaed), Technische Universit?t Dresden, Dresden, Germany;2. Max Planck Institute for Polymer Research, Mainz, Germany;3. Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), Dresden, Germany;4. Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Lodz, Poland |
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| Abstract: | Extraordinary electronic and photonic features render black phosphorus (BP) an important material for the development of novel electronics and optoelectronics. Despite recent progress in the preparation of thinly layered BP flakes, scalable synthesis of large‐size, pristine BP flakes remains a major challenge. An electrochemical delamination strategy is demonstrated that involves intercalation of diverse cations in non‐aqueous electrolytes, thereby peeling off bulk BP crystals into defect‐free flakes comprising only a few layers. The interplay between tetra‐n‐butylammonium cations and bisulfate anions promotes a high exfoliation yield up to 78 % and large BP flakes up to 20.6 μm. Bottom‐gate and bottom‐contact field‐effect transistors, comprising single BP flakes only a few layers thick, exhibit a high hole mobility of 252±18 cm2 V?1 s?1 and a remarkable on/off ratio of (1.2±0.15)×105 at 143 K under vacuum. This efficient and scalable delamination method holds great promise for development of BP‐based composites and optoelectronic devices. |
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| Keywords: | black phosphorus electrochemistry exfoliation field-effect transistors two-dimensional flakes |
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