Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium |
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Authors: | I V Altukhov M S Kagan K A Korolev V P Sinis E G Chirkova M A Odnoblyudov I N Yassievich |
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Institution: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 103907 Moscow, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | The stimulated emission spectrum of uniaxially strained p-Ge is presented. The energy spectrum of the states of a shallow acceptor in Ge under uniaxial compression is calculated.
The threshold pressure at which the acceptor state split off from the ground state becomes resonant is found. The pressure
dependence of the width of this resonant level is calculated. The stimulated emission lines are identified. In particular,
it is shown that the principal emission peak corresponds to the transition of holes from the resonant 1s (1s
r) state to the local p
±1 state. The probabilities of optical transitions are calculated. A mechanism of population inversion due to the intense resonant
scattering of hot holes with an energy corresponding to the position of the 1s
r level is proposed.
Zh. éksp. Teor. Fiz. 115, 89–100 (January 1999) |
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