Phenomenological model of the accumulation of a space charge by high-energy injection of electrons in high-resistivity materials

The assumption of a constant ratio of the density of free carriers to the total carrier density in the process of electron injection is used to develop a phenomenological model of the accumulation of a space charge by high-energy injection. Use is made of the concept of a quasi-Fermi level in the case of an exponential distribution of trap energies.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 96–98, May, 1980.